According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a mask layer on the stacked body. The method includes forming a stopper film in a part of the mask layer. The method includes forming a plurality of mask holes in the mask layer. The mask holes include a first mask hole overlapping on the stopper film. The method includes, by etching using the mask layer, forming holes in the stacked body under other mask holes than the first mask hole on the stopper film, but not forming holes in the stacked body under the stopper film. The method includes forming memory films and channel bodies in the holes.