Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15008753Application Date: 2016-01-28
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Publication No.: US09786680B2Publication Date: 2017-10-10
- Inventor: Shun Shimizu , Hiroki Yamashita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/11582 ; H01L27/11568 ; H01L27/11556 ; H01L27/1157 ; H01L23/528

Abstract:
A semiconductor device includes: a semiconductor substrate, a first portion and a second portion of an upper layer portion of the semiconductor substrate being conductive; an insulating member electrically isolating the first portion from the second portion; a first stacked body provided in a region directly above the second portion, the first stacked body including first insulating films and electrode films stacked alternately; a semiconductor pillar provided inside the first stacked body and extending in a stacking direction; a charge storage film provided between the semiconductor pillar and the electrode films; a second stacked body provided in a region directly above the first portion, the second stacked body including second insulating films and third insulating films stacked alternately; and two first conductive pillars provided inside the second stacked body extending in the stacking direction, lower ends thereof being connected to the first portion.
Public/Granted literature
- US20170077027A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
Information query
IPC分类: