Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15178919Application Date: 2016-06-10
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Publication No.: US09786687B2Publication Date: 2017-10-10
- Inventor: Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2000-064227 20000308
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; G02F1/1362 ; G02F1/1333 ; G02F1/1345 ; G02F1/1368 ; H01L21/67 ; H01L29/66 ; G02F1/1339 ; G02F1/1343

Abstract:
[Summary][Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
Public/Granted literature
- US20160358941A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-12-08
Information query
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