The invention provides a scan driving circuit for an oxide semiconductor thin film transistor and a NAND logic operation circuit thereof. The NAND logic operation circuit includes: a first inverter and a second inverter applied to a pull-down holding circuit of a GOA circuit, and multiple transistors. The invention uses the combination of NFTF and inverter to replace a function of original PMOS elements and thereby achieves characteristics similar to that of the original CMOS NAND operation circuit. Accordingly, the invention can solve the design problem of IGZO TFT single type of device logic operation circuit and thus is more suitable for integrating a large scale digital integrated circuit on a liquid crystal display device.