- Patent Title: Unit pixel having an insulated contact penetrating a charge accumulation region, solid-state image pickup unit including the same, and method of manufacturing the unit pixel
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Application No.: US14939280Application Date: 2015-11-12
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Publication No.: US09786708B2Publication Date: 2017-10-10
- Inventor: Tetsuji Yamaguchi , Kazunori Nagahata , Toshihiro Miura , Kaori Takimoto
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2013-013554 20130128
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L27/146 ; H01L21/74

Abstract:
A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.
Public/Granted literature
- US20160064440A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR UNIT INCLUDING THE SAME Public/Granted day:2016-03-03
Information query
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