Invention Grant
- Patent Title: Semiconductor device with well resistor and alternated insulating and active regions between input and output terminals
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Application No.: US14807757Application Date: 2015-07-23
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Publication No.: US09786738B2Publication Date: 2017-10-10
- Inventor: Kiyoshi Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-164811 20140813
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/06 ; H01L29/06 ; H01L29/10 ; H01L29/417 ; H01L21/762 ; H01L49/02

Abstract:
A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided.The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.
Public/Granted literature
- US20160049470A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-02-18
Information query
IPC分类: