Invention Grant
- Patent Title: Stacked nanosheets by aspect ratio trapping
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Application No.: US15228153Application Date: 2016-08-04
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Publication No.: US09786739B2Publication Date: 2017-10-10
- Inventor: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/20 ; H01L29/04 ; H01L29/417 ; H01L29/423
Abstract:
A semiconductor structure is provided that includes a plurality of suspended and stacked nanosheets of semiconductor channel material located above a pillar of a sacrificial III-V compound semiconductor material. Each semiconductor channel material comprises a semiconductor material that is substantially lattice matched to, but different from, the sacrificial III-V compound semiconductor material, and each suspended and stacked nanosheets of semiconductor channel material has a chevron shape. A functional gate structure can be formed around each suspended and stacked nanosheet of semiconductor channel material.
Public/Granted literature
- US20170170269A1 STACKED NANOSHEETS BY ASPECT RATIO TRAPPING Public/Granted day:2017-06-15
Information query
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