Invention Grant
- Patent Title: Semiconductor device and method for producing the same
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Application No.: US14619631Application Date: 2015-02-11
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Publication No.: US09786740B2Publication Date: 2017-10-10
- Inventor: Tatsuo Shimizu , Takashi Shinohe
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-059198 20140320
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L29/16 ; H01L21/04 ; H01L29/47 ; H01L29/167 ; H01L29/66 ; H01L29/78 ; H01L29/872 ; H01L21/265 ; H01L29/36 ; H01L29/423 ; H01L29/45 ; H01L29/417 ; H01L29/06
Abstract:
A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1×1018 cm−3 or more and 1×1022 cm−3 or less; and a metal layer provided on the SiC region.
Public/Granted literature
- US20150270353A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2015-09-24
Information query
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