Invention Grant
- Patent Title: Semiconductor device with electron supply layer
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Application No.: US14828995Application Date: 2015-08-18
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Publication No.: US09786743B2Publication Date: 2017-10-10
- Inventor: Akira Endoh
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/205 ; H01L29/778 ; H01L29/43 ; H01L29/66 ; H01L29/20
Abstract:
A semiconductor device includes a semiconductor stacked structure including at least an electron transit layer and an electron supply layer over a substrate. The electron supply layer includes a first portion and second portions sandwiching the first portion, and the first portion has a higher energy of a conduction band than that of the second portion, and includes a doped portion doped with an n-type impurity and undoped portions that sandwich the doped portion and are not doped with an impurity.
Public/Granted literature
- US20150357420A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-10
Information query
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