Invention Grant
- Patent Title: Self-aligned dual trench device
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Application No.: US14797290Application Date: 2015-07-13
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Publication No.: US09786753B2Publication Date: 2017-10-10
- Inventor: Yun-Pu Ku , Chiao-Shun Chuang , Cheng-Chin Huang
- Applicant: Diodes Incorporated
- Applicant Address: US TX Plano
- Assignee: Diodes Incorporated
- Current Assignee: Diodes Incorporated
- Current Assignee Address: US TX Plano
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/40 ; H01L21/762 ; H01L29/78 ; H01L29/872
Abstract:
A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as described in detail in the specification. The devices that embody this invention can be fabricated with higher packaging density and better and more tightly distributed device parameters such as the VF, RDSS, and BV.
Public/Granted literature
- US20170018619A1 Self-Aligned Dual Trench Device Public/Granted day:2017-01-19
Information query
IPC分类:
