Invention Grant
- Patent Title: Gate electrode of a semiconductor device, and method for producing same
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Application No.: US14424943Application Date: 2013-08-22
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Publication No.: US09786762B2Publication Date: 2017-10-10
- Inventor: Hiromu Yamaguchi , Kazuaki Tonari
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: LONGITUDE SEMICONDUCTOR S.A.R.L.
- Current Assignee: LONGITUDE SEMICONDUCTOR S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: Kunzler Law Group, PC
- Priority: JP2012-188780 20120829
- International Application: PCT/JP2013/073073 WO 20130822
- International Announcement: WO2014/034748 WO 20140306
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L29/49 ; H01L21/8238 ; H01L21/8234 ; H01L21/02 ; H01L21/28 ; H01L21/285
Abstract:
A semiconductor device includes a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode having a metal layer, a metal oxide layer and a silicon layer containing a dopant, provided sequentially on the gate insulating film; and a transistor having a gate insulating film and a gate electrode.
Public/Granted literature
- US20150263124A1 SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME Public/Granted day:2015-09-17
Information query
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