Invention Grant
- Patent Title: Semiconductor device structure with non planar slide wall
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Application No.: US15286988Application Date: 2016-10-06
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Publication No.: US09786770B1Publication Date: 2017-10-10
- Inventor: Jay Paul John , Vishal Trivedi , James Albert Kirchgessner
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/66 ; H01L21/265 ; H01L21/311 ; H01L29/08
Abstract:
A semiconductor device that includes a semiconductor structure having a side wall that is non planar and that extends farther outward at an upper portion than at a lower portion of the side wall. The semiconductor structure extends underneath a semiconductor layer wherein a top portion of the structure contacts the semiconductor layer.
Information query
IPC分类:
