A semiconductor device including a first electrode, a second electrode, and a silicon carbide layer of which at least a portion is provided between the first electrode and the second electrode, the silicon carbide layer including an n-type first silicon carbide region, a plurality of p-type second silicon carbide regions, and a plurality of n-type third silicon carbide regions. The semiconductor device further includes a plurality of first conductive layers each of which is in contact with the n-type first silicon carbide region, a number n, n being 2, 3, 4 or 5, of first gate electrodes that are provided between two adjacent first conductive layers of the plurality of first conductive layers, and extend in the first direction, and a plurality of first gate insulating layers each of which is provided between one of the n first gate electrodes and the n-type first silicon carbide region.