Invention Grant
- Patent Title: Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
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Application No.: US15083251Application Date: 2016-03-28
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Publication No.: US09786785B2Publication Date: 2017-10-10
- Inventor: Kook-Tae Kim , Young-Tak Kim , Ho-Sung Son , Seok-Jun Won , Ji-Hye Yi , Chul-Woong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0067855 20130613
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L29/49 ; H01L29/51
Abstract:
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
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