Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US15153047Application Date: 2016-05-12
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Publication No.: US09786787B2Publication Date: 2017-10-10
- Inventor: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-191093 19990706
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/66 ; G02F1/1333 ; G02F1/1339 ; G02F1/1362 ; G02F1/1368 ; H01L29/78 ; G02F1/133 ; G02F1/1343 ; H01L21/02 ; H01L21/027 ; H01L21/3065 ; H01L21/308 ; H01L29/167 ; G02F1/1345
Abstract:
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Public/Granted literature
- US20160260842A1 Semiconductor Device and Fabrication Method Thereof Public/Granted day:2016-09-08
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