Invention Grant
- Patent Title: Thin film transistor, array substrate and method of manufacturing the same
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Application No.: US14892569Application Date: 2015-06-25
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Publication No.: US09786791B2Publication Date: 2017-10-10
- Inventor: Gaofei Shi , Tianzhen Liu , Jie Song , Yijun Wang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Hefei, Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Hefei, Anhui
- Agency: Kinney & Lange, P.A.
- Priority: CN201510032732 20150122
- International Application: PCT/CN2015/082346 WO 20150625
- International Announcement: WO2016/115824 WO 20160728
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L27/32 ; H01L29/40 ; H01L29/49 ; H01L29/66

Abstract:
The disclosed provides a thin film transistor, an array substrate, a display device and methods of manufacturing the thin film transistor and the array substrate. An active layer of the thin film transistor is formed of metallic oxide material, and a source electrode and a drain electrode of the thin film transistor both are formed of graphene or silver nanowire. The source electrode and the drain electrode are formed through an ink-jet printing process. Due to characteristics of graphene or silver nanowire, the manufacturing process of the thin film transistor may be simplified, the performance of the thin film transistor may be improved and the size of a channel region may be decreased. Further, an aperture ratio of the array substrate and the display device having such a thin film transistor may be increased.
Public/Granted literature
- US20160359047A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-12-08
Information query
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