Invention Grant
- Patent Title: Light emitting diode and method for manufacturing the same
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Application No.: US14823129Application Date: 2015-08-11
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Publication No.: US09786818B2Publication Date: 2017-10-10
- Inventor: Ching-Hsueh Chiu , Chia-Hung Huang , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agent Steven Reiss
- Priority: CN201410441937 20140902
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L33/40 ; H01L33/38 ; H01L33/00 ; H01L33/32 ; H01L33/44
Abstract:
A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.
Public/Granted literature
- US20160064613A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-03-03
Information query
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