- Patent Title: Laser diode chip and flip chip type laser diode package structure
-
Application No.: US15197790Application Date: 2016-06-30
-
Publication No.: US09787053B2Publication Date: 2017-10-10
- Inventor: Chih-Ling Wu , Yu-Yun Lo
- Applicant: PlayNitride Inc.
- Applicant Address: TW Tainan
- Assignee: PlayNitride Inc.
- Current Assignee: PlayNitride Inc.
- Current Assignee Address: TW Tainan
- Agency: Jianq Chyun IP Office
- Priority: TW103121394A 20140620
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/022 ; H01S5/042 ; H01S5/22 ; H01S5/02 ; H01S5/227 ; H01S5/024

Abstract:
A laser diode chip includes a removable substrate, a first semiconductor layer disposed on the removable substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the removable substrate covers a part of projections of the first electrode and the second electrode projected to the removable substrate.
Public/Granted literature
- US20160315444A1 LASER DIODE CHIP AND FLIP CHIP TYPE LASER DIODE PACKAGE STRUCTURE Public/Granted day:2016-10-27
Information query