Invention Grant
- Patent Title: Semiconductor light emitting element
-
Application No.: US15294409Application Date: 2016-10-14
-
Publication No.: US09787059B2Publication Date: 2017-10-10
- Inventor: Komei Tazawa , Ji-Hao Liang
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2015-206550 20151020
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/02 ; H01S5/042 ; H01S5/24 ; H01S5/20 ; H01S5/028 ; H01S5/16 ; H01S5/323

Abstract:
A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.
Public/Granted literature
- US20170110851A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2017-04-20
Information query