Embodiments of a radio frequency (RF) amplification are disclosed. The RF amplification device includes a first RF amplification circuit, a second RF amplification circuit, and power control circuitry operable in a first power mode and a second power mode. The first RF amplification circuit has a cascode amplifier stage configured to amplify an RF signal. The cascode amplifier stage has an input transistor and a cascode output transistor that are stacked in cascode. The second RF amplification circuit is configured to amplify the RF signal. The power control circuitry is configured to bias the first cascode output transistor so that the first cascode output transistor operates in a saturation region in the first power mode and bias the first cascode output transistor so that the first cascode output transistor operates in a triode region in the second power mode. The second RF amplification circuit is assisted without introducing additional loading.