Invention Grant
- Patent Title: Method and system for providing automatic gate bias and bias sequencing for field effect transistors
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Application No.: US14626580Application Date: 2015-02-19
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Publication No.: US09787271B2Publication Date: 2017-10-10
- Inventor: Lloyd L Lautzenhiser
- Applicant: Emhiser Research Limited
- Applicant Address: US CA Perry Sound
- Assignee: EMHISER RESEARCH LIMITED
- Current Assignee: EMHISER RESEARCH LIMITED
- Current Assignee Address: US CA Perry Sound
- Agency: Duncan Galloway Egan Greenwald, PLLC
- Agent Kevin T. Duncan
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F1/02 ; H03F1/56 ; H03F3/193

Abstract:
A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
Public/Granted literature
- US20170093353A1 METHOD AND SYSTEM FOR PROVIDING AUTOMATIC GATE BIAS AND BIAS SEQUENCING FOR FIELD EFFECT TRANSISTORS Public/Granted day:2017-03-30
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