Invention Grant
- Patent Title: Sense amplifier for memory device
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Application No.: US15363270Application Date: 2016-11-29
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Publication No.: US09792962B1Publication Date: 2017-10-17
- Inventor: Francesco La Rosa , Gineuve Alieri
- Applicant: STMicroelectronics (Rousset) SAS , STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza (MB) FR Rousset
- Assignee: STMicroelectronics S.r.l.,STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics S.r.l.,STMicroelectronics (Rousset) SAS
- Current Assignee Address: IT Agrate Brianza (MB) FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1653396 20160418
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/06 ; G11C5/14 ; G11C8/10

Abstract:
A read-amplifier circuit includes a core with a first input and a second input that are intended to receive in a measurement phase a differential signal arising from a first bit line and from a second bit line of the memory device. The circuit also includes a memory element with two inverters coupled in a crossed manner. The first and second inputs are respectively connected to two of the power supply nodes of the inverters via two transfer capacitors. A first controllable circuit is configured to temporarily render the memory element floating during an initial phase preceding the measurement phase and during the measurement phase.
Public/Granted literature
- US20170301378A1 SENSE AMPLIFIER FOR MEMORY DEVICE Public/Granted day:2017-10-19
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