Volatile memory erasure by manipulating reference voltage of the memory
Abstract:
The present invention provides an erasure circuitry, a method for erasing a volatile memory, a volatile memory and erasure module in the form of computer readable instructions, where the erasure circuitry is adapted to erase the memory at occurrence of a predefined event. The erasure circuitry includes a negative pulse generator which is adapted to reduce the charge on capacitor in one or more volatile memory cells to zero logic by using a switch connected to the Voltage Reference (Vref) of the volatile memory cell, a controller and a negative power supply. The switch and the negative power supply impose a negative pulse on the Vref of the volatile memory cells on being instructed by the controller at the occurrence of a predefined event. An erasure module associated with the controller is provided for instructing the erasure circuitry for erasing data at the occurrence of a predefined event.
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