Invention Grant
- Patent Title: Volatile memory erasure by manipulating reference voltage of the memory
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Application No.: US14679162Application Date: 2015-04-06
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Publication No.: US09792977B2Publication Date: 2017-10-17
- Inventor: Baker Shehadah Mohammad , Khaled Hamed Salah , Mahmoud Abdullah Al-Qutayri
- Applicant: Khalifa University of Science, Technology & Research (KUSTAR)
- Applicant Address: AE
- Assignee: Khalifa University of Science and Technology
- Current Assignee: Khalifa University of Science and Technology
- Current Assignee Address: AE
- Agency: Hayes Soloway PC
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G11C11/409 ; G06F1/32 ; G11C11/4072

Abstract:
The present invention provides an erasure circuitry, a method for erasing a volatile memory, a volatile memory and erasure module in the form of computer readable instructions, where the erasure circuitry is adapted to erase the memory at occurrence of a predefined event. The erasure circuitry includes a negative pulse generator which is adapted to reduce the charge on capacitor in one or more volatile memory cells to zero logic by using a switch connected to the Voltage Reference (Vref) of the volatile memory cell, a controller and a negative power supply. The switch and the negative power supply impose a negative pulse on the Vref of the volatile memory cells on being instructed by the controller at the occurrence of a predefined event. An erasure module associated with the controller is provided for instructing the erasure circuitry for erasing data at the occurrence of a predefined event.
Public/Granted literature
- US20160293244A1 VOLATILE MEMORY ERASURE BY MANIPULATING REFERENCE VOLTAGE OF THE MEMORY Public/Granted day:2016-10-06
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