Invention Grant
- Patent Title: Focused ion beam apparatus
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Application No.: US15010231Application Date: 2016-01-29
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Publication No.: US09793085B2Publication Date: 2017-10-17
- Inventor: Anto Yasaka , Tomokazu Kozakai , Osamu Matsuda , Yasuhiko Sugiyama , Kazuo Aita , Fumio Aramaki , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2015-031063 20150203
- Main IPC: H01J37/08
- IPC: H01J37/08

Abstract:
A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. The gas field ion source has an emitter for emitting ions, the emitter having a sharpened end part made of iridium fixed to a cylinder-shaped base part made of dissimilar wire.
Public/Granted literature
- US20160225574A1 FOCUSED ION BEAM APPARATUS Public/Granted day:2016-08-04
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