Invention Grant
- Patent Title: Preparing a semiconductor surface for epitaxial deposition
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Application No.: US15008663Application Date: 2016-01-28
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Publication No.: US09793104B2Publication Date: 2017-10-17
- Inventor: Maxim Kelman , Shahab Khandan , Scott Dunham , Tac van Huynh , Kenneth B. K. Teo
- Applicant: AIXTRON SE
- Applicant Address: DE Herzogenrath
- Assignee: AIXTRON SE
- Current Assignee: AIXTRON SE
- Current Assignee Address: DE Herzogenrath
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; C23C16/02
Abstract:
Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.
Public/Granted literature
- US20160225608A1 PREPARING A SEMICONDUCTOR SURFACE FOR EPITAXIAL DEPOSITION Public/Granted day:2016-08-04
Information query
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