Invention Grant
- Patent Title: Lift-off method
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Application No.: US14716149Application Date: 2015-05-19
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Publication No.: US09793166B2Publication Date: 2017-10-17
- Inventor: Tasuku Koyanagi , Noboru Takeda , Hiroshi Morikazu
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2014-103522 20140519
- Main IPC: B32B37/00
- IPC: B32B37/00 ; H01L21/78 ; H01L21/683 ; H01L33/00 ; B32B43/00 ; B23K20/00 ; B23K20/10 ; B23K26/08 ; B23K26/50 ; B23K26/0622 ; B23K101/40 ; B23K103/16 ; B23K103/00

Abstract:
A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.
Public/Granted literature
- US20150328872A1 LIFT-OFF METHOD Public/Granted day:2015-11-19
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