Invention Grant
- Patent Title: Semiconductor device and related manufacturing method
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Application No.: US15138963Application Date: 2016-04-26
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Publication No.: US09793173B2Publication Date: 2017-10-17
- Inventor: Deyuan Xiao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP.
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP.
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201510232427 20150508
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8252 ; H01L21/84 ; H01L29/66 ; H01L29/78 ; H01L21/8238
Abstract:
A semiconductor device may include a substrate, an n-channel field-effect transistor positioned on the substrate, and a p-channel field-effect transistor positioned on the substrate. The n-channel field-effect transistor may include an n-type silicide source portion, an n-type silicide drain portion, and a first n-type channel region. The first n-type channel region may be positioned between the n-type silicide source portion and the n-type silicide drain portion and may directly contact each of the n-type silicide source portion and the n-type silicide drain portion.
Public/Granted literature
- US20160329427A1 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD Public/Granted day:2016-11-10
Information query
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