Invention Grant
- Patent Title: Method for manufacturing device embedded substrate, and device embedded substrate
-
Application No.: US14890896Application Date: 2013-05-14
-
Publication No.: US09793218B2Publication Date: 2017-10-17
- Inventor: Mitsuaki Toda , Tohru Matsumoto , Seiko Murata
- Applicant: MEIKO ELECTRONICS CO., LTD.
- Applicant Address: JP Ayase-shi, Kanagawa
- Assignee: MEIKO ELECTRONICS CO., LTD.
- Current Assignee: MEIKO ELECTRONICS CO., LTD.
- Current Assignee Address: JP Ayase-shi, Kanagawa
- Agency: Marshall, Gerstein & Borun LLP
- International Application: PCT/JP2013/063432 WO 20130514
- International Announcement: WO2014/184873 WO 20141120
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/768 ; H01L21/56 ; H01L23/29 ; H05K1/18 ; H01L23/00 ; H05K3/46
Abstract:
In a method for manufacturing a device embedded substrate, a conductive via that penetrates a first insulating layer and a second insulating layer from an outer metal layer to reach a second terminal of an IC device is formed after forming the outer metal layer.
Public/Granted literature
- US20160099215A1 METHOD FOR MANUFACTURING DEVICE EMBEDDED SUBSTRATE, AND DEVICE EMBEDDED SUBSTRATE Public/Granted day:2016-04-07
Information query
IPC分类:
