Invention Grant
- Patent Title: Crack stop barrier and method of manufacturing thereof
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Application No.: US14975607Application Date: 2015-12-18
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Publication No.: US09793224B2Publication Date: 2017-10-17
- Inventor: Sylvia Baumann Winter
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/544 ; H01L23/58 ; H01L21/78

Abstract:
A wafer is disclosed. The wafer comprises a plurality of chips and a plurality of kerfs. A kerf of the plurality of kerfs separates one chip from another chip. The kerf comprises a crack stop barrier.
Public/Granted literature
- US20160104682A1 Crack Stop Barrier and Method of Manufacturing Thereof Public/Granted day:2016-04-14
Information query
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