A power semiconductor device includes: a first MOSFET having a first conductivity type including a first source, a first drain, and a first gate; a second MOSFET having a first conductivity type including a second drain, a second source electrically coupled to the first source, and a second gate electrically coupled the first gate; and a diode being coupled between the first and second drains. A breakdown voltage of the first MOSFET is higher than that of the second MOSFET