Invention Grant
- Patent Title: Methods of fabricating memory device with spaced-apart semiconductor charge storage regions
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Application No.: US14560308Application Date: 2014-12-04
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Publication No.: US09793288B2Publication Date: 2017-10-17
- Inventor: Shinsuke Yada , Hiroyuki Kamiya
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L21/3205

Abstract:
Methods of fabricating semiconductor devices, such as monolithic three-dimensional NAND memory string devices, include selectively forming semiconductor material charge storage regions over first material layers exposed on a sidewall of a front side opening extending through a stack comprising an alternating plurality of first and second material layers using a difference in incubation time for the semiconductor material on the first material relative to an incubation time for the semiconductor material on the second material of the stack. In other embodiments, a silicon layer is selectively deposited on silicon nitride on a surface having at least one first portion including silicon oxide and at least one second portion including silicon nitride using a difference in an incubation time for the silicon on silicon nitride relative to an incubation time for the silicon on silicon oxide.
Public/Granted literature
- US20160181271A1 METHODS OF FABRICATING MEMORY DEVICE WITH SPACED-APART SEMICONDUCTOR CHARGE STORAGE REGIONS Public/Granted day:2016-06-23
Information query
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