Invention Grant
- Patent Title: Method of manufacturing semiconductor unit and the semiconductor unit
-
Application No.: US15201485Application Date: 2016-07-03
-
Publication No.: US09793311B2Publication Date: 2017-10-17
- Inventor: Masatoshi Kimura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-178533 20150910
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146

Abstract:
In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of incident light on the solid-state imaging device becomes large in a pixel in an end of the solid-state imaging device, causing a difference in output between the two photodiodes in the pixel, and thus autofocus detection accuracy is deteriorated. Photodiodes extending in a longitudinal direction of a pixel allay section are provided in each pixel. The photodiodes in the pixel are arranged in a direction orthogonal to the longitudinal direction of the pixel allay section.
Public/Granted literature
- US20170077165A1 METHOD OF MANUFACTURING SEMICONDUCTOR UNIT AND THE SEMICONDUCTOR UNIT Public/Granted day:2017-03-16
Information query
IPC分类: