Invention Grant
- Patent Title: Integrated circuits and fabrication methods thereof
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Application No.: US15167783Application Date: 2016-05-27
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Publication No.: US09793337B2Publication Date: 2017-10-17
- Inventor: Yuan-Fu Chung , Chu-Wei Hu , Yuan-Hung Chung
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L49/02 ; H01L21/265 ; H01L21/268 ; H01L21/28 ; H01L21/324 ; H01L27/06 ; H01L21/762 ; H01L21/8234 ; H01L29/06 ; H01L29/49 ; H01L21/02 ; H01L21/266 ; H01L29/167 ; H01L21/3215 ; H01L27/02
Abstract:
An integrated circuit includes a first polysilicon region having a first grain size formed on a substrate. The integrated circuit also includes a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate. The first polysilicon region is doped with a first dopant of a first conductive type and a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.
Public/Granted literature
- US20160276338A1 INTEGRATED CIRCUITS AND FABRICATION METHODS THEREOF Public/Granted day:2016-09-22
Information query
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