Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15257853Application Date: 2016-09-06
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Publication No.: US09793343B2Publication Date: 2017-10-17
- Inventor: Eri Ogawa , Hiroki Wakimoto , Misaki Takahashi , Yuichi Onozawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC., LTD.
- Current Assignee: FUJI ELECTRIC., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2015-182760 20150916
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L29/739 ; H01L29/78 ; H01L29/10
Abstract:
To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.
Public/Granted literature
- US20170077217A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
Information query
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