Invention Grant
- Patent Title: Ohmic contact to semiconductor
-
Application No.: US14955504Application Date: 2015-12-01
-
Publication No.: US09793367B2Publication Date: 2017-10-17
- Inventor: Remigijus Gaska , Michael Shur
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: Labatt, LLC
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L33/38 ; H01L33/40 ; H01L21/285 ; H01L29/15 ; H01L29/20 ; H01L29/205 ; H01L29/417 ; H01L33/06 ; H01L33/32
Abstract:
An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
Public/Granted literature
- US20160093702A1 Ohmic Contact to Semiconductor Public/Granted day:2016-03-31
Information query
IPC分类:
