Invention Grant
- Patent Title: MOSFET device and fabrication
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Application No.: US14033692Application Date: 2013-09-23
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Publication No.: US09793393B2Publication Date: 2017-10-17
- Inventor: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/423 ; H01L29/417
Abstract:
A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region.
Public/Granted literature
- US20140091386A1 MOSFET DEVICE AND FABRICATION Public/Granted day:2014-04-03
Information query
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