Invention Grant
- Patent Title: Growth layer for photovoltaic applications
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Application No.: US13261697Application Date: 2012-02-03
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Publication No.: US09793420B2Publication Date: 2017-10-17
- Inventor: Neil Mcsporran
- Applicant: Neil Mcsporran
- Applicant Address: GB Lathom
- Assignee: Pilkington Group Limited
- Current Assignee: Pilkington Group Limited
- Current Assignee Address: GB Lathom
- Agency: Marshall & Melhorn, LLC
- Priority: GB1101910.6 20110204
- International Application: PCT/GB2012/050243 WO 20120203
- International Announcement: WO2012/104656 WO 20120809
- Main IPC: B32B15/04
- IPC: B32B15/04 ; B32B17/06 ; H01L31/02 ; H01L31/032 ; H01L31/0392 ; H01L31/0749
Abstract:
Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.
Public/Granted literature
- US20130306142A1 GROWTH LAYER FOR PHOTOVOLTAIC APPLICATIONS Public/Granted day:2013-11-21
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