Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
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Application No.: US15259408Application Date: 2016-09-08
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Publication No.: US09793469B2Publication Date: 2017-10-17
- Inventor: Yushi Kato , Tadaomi Daibou , Yuichi Ohsawa , Shumpei Omine , Naoki Hase
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-050849 20140313
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; H01L43/02

Abstract:
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.
Public/Granted literature
- US20160380184A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2016-12-29
Information query
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