Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US14903466Application Date: 2014-07-02
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Publication No.: US09793681B2Publication Date: 2017-10-17
- Inventor: Yuu Takiguchi , Yoshiro Nomoto
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-147904 20130716
- International Application: PCT/JP2014/067712 WO 20140702
- International Announcement: WO2015/008627 WO 20150122
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01S5/12 ; H01S5/187 ; G02F1/137 ; G02F1/1335 ; G02F1/29 ; H01S5/00 ; H01S5/343

Abstract:
This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.
Public/Granted literature
- US20160380405A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2016-12-29
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