Invention Grant
- Patent Title: Junctionless semiconductor light emitting devices
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Application No.: US14117560Application Date: 2012-05-24
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Publication No.: US09793685B2Publication Date: 2017-10-17
- Inventor: Deli Wang , Muchuan Yang , Chun Li
- Applicant: Deli Wang , Muchuan Yang , Chun Li
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Greer, Burns & Crain
- Agent Steven P. Fallon
- International Application: PCT/US2012/039352 WO 20120524
- International Announcement: WO2012/162506 WO 20121129
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/34 ; H01J63/06
Abstract:
A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.
Public/Granted literature
- US20140291609A1 JUNCTIONLESS SEMICONDUCTOR LIGHT EMITTING DEVICES Public/Granted day:2014-10-02
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