Invention Grant
- Patent Title: Semiconductor structure having contact holes between sidewall spacers and fabrication method there of
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Application No.: US15059635Application Date: 2016-03-03
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Publication No.: US09799564B2Publication Date: 2017-10-24
- Inventor: Chenglong Zhang , Haiyang Zhang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201510125779 20150320
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L21/311 ; H01L21/768 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
The disclosed subject matter provides a semiconductor structure and fabrication method thereof. In a semiconductor structure, a dielectric layer, a plurality of discrete gate structures, and a plurality of sidewall spacers are formed on a semiconductor substrate. The plurality of discrete gate structures and sidewall spacers are formed in the dielectric layer, and a sidewall spacer is formed on each side of each gate structure. A top portion of each gate structure and a top portion of the dielectric layer between neighboring sidewall spacers of neighboring gate structures are removed. A protective layer is formed on each of the remaining dielectric layer and the remaining gate structures. Contact holes are formed on the semiconductor substrate, between neighboring sidewall spacers, and on opposite sides of the protective layer on the remaining dielectric layer. A metal plug is formed in each contact hole.
Public/Granted literature
- US20160276283A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2016-09-22
Information query
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