Invention Grant
- Patent Title: High near infrared sensitivity image sensor
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Application No.: US14494960Application Date: 2014-09-24
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Publication No.: US09799699B2Publication Date: 2017-10-24
- Inventor: Duli Mao , Vincent Venezia , Gang Chen , Dajiang Yang , Dyson H. Tai
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146

Abstract:
An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.
Public/Granted literature
- US20160086999A1 HIGH NEAR INFRARED SENSITIVITY IMAGE SENSOR Public/Granted day:2016-03-24
Information query
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