Invention Grant
- Patent Title: Semiconductor device and method for forming same
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Application No.: US14797787Application Date: 2015-07-13
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Publication No.: US09799723B2Publication Date: 2017-10-24
- Inventor: Jui-Yao Lai , Chun-Yi Lee , Shyh-Wei Wang , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L29/06 ; H01L23/522 ; H01L27/06 ; H01L29/08 ; H01L21/8238 ; H01L27/08
Abstract:
A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing process or may be integrated with multiple types of resistors.
Public/Granted literature
- US20150318341A1 Semiconductor Device and Method for Forming Same Public/Granted day:2015-11-05
Information query
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