Invention Grant
- Patent Title: FinFET and method for manufacturing the same
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Application No.: US14690720Application Date: 2015-04-20
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Publication No.: US09799771B2Publication Date: 2017-10-24
- Inventor: Tung-Wen Cheng , Che-Cheng Chang , Mu-Tsang Lin , Zhe-Hao Zhang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/3065 ; H01L29/66 ; H01L21/762 ; H01L29/06 ; H01L21/8234 ; H01L27/088
Abstract:
Methods for manufacturing a FinFET and a FinFET are provided. In various embodiments, the method for manufacturing a FinFET includes etching a base substrate to form a trapezoidal fin structure. Next, an isolation layer is deposited covering the etched base substrate. Then, the trapezoidal fin structure is exposed. The trapezoidal fin structure includes a top surface and a bottom surface, and the top surface has a width larger than that of the bottom surface.
Public/Granted literature
- US20160308058A1 FINFET AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-10-20
Information query
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