Invention Grant
- Patent Title: Writing to multi-port memories
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Application No.: US14547840Application Date: 2014-11-19
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Publication No.: US09805779B2Publication Date: 2017-10-31
- Inventor: Cormac Michael O'Connell , Atul Katoch
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C8/16
- IPC: G11C8/16 ; G11C7/02 ; G11C11/419

Abstract:
A circuit includes a first memory cell and a data control circuit configured to provide first data and second data. The first memory cell has a first port and a second port. The first data is written from the first port to the first memory cell. The second data is based on information of the first data. The second port is configured to write the second data to the first memory cell based on a detection of a write disturb caused by the second port to the first port.
Public/Granted literature
- US20150138903A1 WRITING TO MULTI-PORT MEMORIES Public/Granted day:2015-05-21
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