Invention Grant
- Patent Title: Memory device, memory module, and memory system
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Application No.: US15264774Application Date: 2016-09-14
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Publication No.: US09805802B2Publication Date: 2017-10-31
- Inventor: Jong-Pil Son , Uk-Song Kang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0129778 20150914; KR10-2016-0008093 20160122
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C16/10 ; G06F13/16

Abstract:
A memory device includes a memory cell array, a data pattern providing unit, and a write circuit. The memory cell array includes a plurality of memory regions. The data pattern providing unit is configured to provide a predefined data pattern. The write circuit is configured to, when a first write command and an address signal are received from an external device, write the predefined data pattern provided from the data pattern providing unit to a memory region corresponding to the address signal.
Public/Granted literature
- US20170076768A1 MEMORY DEVICE, MEMORY MODULE, AND MEMORY SYSTEM Public/Granted day:2017-03-16
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