Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Invention Grant

US09805941B2 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) 有权

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Patent Title: Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
Application No.: US15400368

Application Date: 2017-01-06
Publication No.: US09805941B2

Publication Date: 2017-10-31
Inventor: Keren Jacobs Kanarik , Jeffrey Marks , Harmeet Singh , Samantha Tan , Alexander Kabansky , Wenbing Yang , Taeseung Kim , Dennis M. Hausmann , Thorsten Lill
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Weaver Austin Villeneuve & Sampson LLP
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/67 ; H01L21/02 ; C23C16/455 ; H01L21/683 ; H01J37/32 ; H01L43/12

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Abstract:

Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Public/Granted literature

US20170117159A1 INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) AND ALE (ATOMIC LAYER ETCH) Public/Granted day:2017-04-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀