Invention Grant
- Patent Title: Etching method
-
Application No.: US15184049Application Date: 2016-06-16
-
Publication No.: US09805945B2Publication Date: 2017-10-31
- Inventor: Akira Hidaka , Soichiro Kimura , Masaru Sugimoto
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2015-126710 20150624
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
Disclosed is a method for selectively etching a first region made of silicon oxide to a second region made of silicon nitride. The method includes: performing a first sequence once or more to etch the first region; and performing a second sequence once or more to further etch the first region. The first sequence includes: a first step of generating plasma of a processing gas containing a fluorocarbon to form a fluorocarbon-containing deposit on a workpiece; and a second step of etching the first region by radicals of the fluorocarbon. The second sequence includes: a third step of generating plasma of a processing gas containing a fluorocarbon gas to form a fluorocarbon-containing deposit on a workpiece; and a fourth step of generating plasma of a processing gas containing oxygen gas and an inert gas in the processing container.
Public/Granted literature
- US20160379841A1 ETCHING METHOD Public/Granted day:2016-12-29
Information query
IPC分类:
