Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
-
Application No.: US14394112Application Date: 2013-05-17
-
Publication No.: US09805959B2Publication Date: 2017-10-31
- Inventor: Naoki Matsumoto
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-114934 20120518
- International Application: PCT/JP2013/063833 WO 20130517
- International Announcement: WO2013/172456 WO 20131121
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01L21/67 ; C23C16/511 ; H05H1/46 ; C23C16/40 ; H01J37/32 ; H01L21/263 ; H01L21/3065 ; H01L21/324
Abstract:
A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.
Public/Granted literature
- US20150087162A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2015-03-26
Information query
IPC分类:
