Invention Grant
- Patent Title: FinFET structure and method for manufacturing thereof
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Application No.: US14600781Application Date: 2015-01-20
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Publication No.: US09806154B2Publication Date: 2017-10-31
- Inventor: Chun Hsiung Tsai , Lai-Wan Chong , Chien-Wei Lee , Kei-Wei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/265
Abstract:
Present disclosure provides a FinFET structure, including a fin and a gate surrounding a first portion of the fin. A dopant concentration in the first portion of the fin is lower than about 1E17/cm3. The FinFET structure further includes an insulating layer surrounding a second portion of the fin. The dopant concentration of the second portion of the fin is greater than about 8E15/cm3. The insulating layer includes a lower layer and an upper layer, and the lower layer is disposed over a substrate connecting to the fin and has a dopant concentration greater than about 1E19/cm3.
Public/Granted literature
- US20160211326A1 FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2016-07-21
Information query
IPC分类:
